qs5u16 t r ansistors rev.a 1/4 2.5v drive nch+sbd mos fet qs5u16 z st r u c t u r e silicon n-channel mosfet schottky barrier diode z f eatu r es 1) t he qs5u16 combines nch mosf et w i th a schottky barrier diode in a single t s mt 5 p a ckage. 2) low on-st ate resist ance w i th fast sw itching. 3) low volt age drive (2.5v). 4) t he independently connect ed schottky barrier diode has low forw ard volt age. z a pplic a t ions load sw itch, dc / dc conversion z ex te rna l dime ns ions (unit : mm) each lead has same dimensions tsmt5 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 (1) (3) (2) (4) (5) 2.8 1.6 0.4 1.9 2.9 0.95 0.95 abbreviated symbol : u16 z packag in g sp ecificatio n s package code taping basic ordering unit (pieces) qs5u16 tr 3000 type z equiv a le nt c i rc uit (1) gate (2) source (3) anode (4) cathode (5) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (3) (5) (4)
qs5u16 t r ansistors rev.a 2/4 z a b solute maximum ratings (t a= 25 c) v rm v r i f i fsm tj parameter v v dss symbol 30 v v gss 12 a i d 2.0 a i dp 8.0 a i s 0.8 a i sp 3.2 v 20 a 0.5 a 2.0 c 150 c tch 150 v 30 limits unit channel temperature w/element p d 0.9 power dissipation w / total p d 1.25 c tstg ? 55 to +150 total power dissipation range of storage temperature drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed source current (body diode) repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature ? 1 ? 1 ? 3 ? 2 w/element p d 0.7 power dissipation ? 3 ? 3 ? 1 pw 10 s, duty cycle 1% ? 2 60hz ? 1cyc. ? 3 mounted on a ceramic board z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs min. ?? 10 av gs = 12v / v ds = 0v v dd 15v typ. max. unit conditions v (br) dss 30 ?? vi d = 1ma, / v gs = 0v i dss ?? 1 av ds = 30v / v gs = 0v v gs (th) 0.5 ? 1.5 v v ds = 10v / i d = 1ma ? 7 1 100 i d = 2.0a, v gs = 4.5v r ds (on) ? 7 6 107 m ? m ? m ? i d = 2.0a, v gs = 4v ? 110 1 5 4 i d = 2.0a, v gs = 2.5v 1.5 ?? sv ds = 10v, i d = 2.0a c iss ? 175 ? pf v ds = 10v c oss ? 50 25 ? pf v gs = 0v c rss ? 8 ? pf f = 1mhz t d (on) ? 10 ? ns t r ? 21 ? ns t d (off) ? 8 ? ns t f ? 2.8 ? ns q g ? 0.6 3.9 n c q gs ? 0.8 ? nc v gs = 4.5v q gd ?? nc i d = 2.0a ? pulsed ? ? ? ? ? ? ? ? ? v dd 15 v i d = 1.0a v gs = 4.5v r l = 15 ? r g = 10 ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge v sd ?? 1.2 v i s = 3.2a / v gs = 0v forward voltage ? pulsed ? v f ?? 0.47 v i f = 0.5a i r ?? 100 a v r = 20v forward voltage reverse current ?? 0.36 v i f = 0.1a
qs5u16 t r ansistors rev.a 3/4 z electrical ch aracteristic cu rv es 0.0 0.5 1.0 1.5 2.0 2.5 gate-source voltage : v gs (v) 0.001 0.01 0.1 1 10 drain current : i d (a) fig.1 typical transfer characteristics v ds = 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.1 1 1 0 10 100 1000 drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.2 static drain-source on-state resistance vs. drain current v gs = 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.1 1 1 0 10 100 1000 drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.3 static drain-source on-state resistance vs. drain current v gs = 4.0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c fig.4 static drain-source on-state resistance vs. drain current drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) 0.1 1 1 0 10 100 1000 v gs = 2.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0123456789 1 0 gate-source voltage : v gs (v) 0 100 200 300 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 2a i d = 1a 0.1 1 1 0 drain current : i d (a) 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.6 static drain-source on-state resistance vs. drain current ta = 25 c pulsed v gs = 2.5v v gs = 4v v gs = 4.5v 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.01 0.1 1 10 source current : i s (a) v gs = 0v pulsed fig.7 reverse drain current vs. source-drain current ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 1 0 100 drain-source voltage : v ds (v) capacitance : c (pf) 100 1000 10 ta = 25 c f = 1mhz v gs = 0v fig.8 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 1 0 drain current : i d (a) 1 10 100 1000 switching time : t (ns) fig.9 switching characteristics t d (off) t d (on) t r t f ta = 25 c v dd = 15v v gs = 4.5v r g = 10 ? pulsed
qs5u16 t r ansistors rev.a 4/4 0123 total gate charge : qg (nc) 0 1 2 3 4 5 6 gate-source voltage : v gs (v) fig.10 dynamic input characteristics ta = 25 c v dd = 15v i d = 2a r g = 10 ? pulsed 0 0.1 0.2 0.3 0.4 0.5 0.1 1 10 100 1000 ? 25 c 25 c 75 c 125 c forward voltage : v f (v) forward current : i f (ma) fig.11 forward current vs. forward voltage 0 1 02 03 04 0.0001 0.001 0.01 0.1 1 10 100 0 ? 25 c 25 c 75 c 125 c reverse voltage : v r (v) reverse current : i r (ma) fig.12 reverse current vs. reverse voltage z measu remen t circu i t s fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching waveforms fig.15 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.16 gate charge waveform v g v gs charge q g q gs q gd
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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